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參數(shù)資料
| 型號(hào)： | IRF9510 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 59K |
| 代理商： | IRF9510 |
5-4
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9510
-100
-100
-3.0
-2.0
-12
±
20
20
0.16
190
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
PARAMETER
TEST CONDITIONS
MIN
-100
-2.0
-
-
-
-3.0
TYP
-
-
-
-
-
-
MAX
-
-4.0
±1
00
-25
-250
-
UNITS
V
V
nA
μ
A
μ
A
A
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Gate to Source Leakage Current
Zero-Gate Voltage Drain Current
V
GS
= 0V, I
D
= -250
μ
A, (Figure 10)
V
GS
= V
DS
, I
D
= -250
μ
A
V
GS
=
±
20V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= -10V,
(Figure 7)
V
GS
= -10V, I
D
= -1.5A, (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)
Max, I
D
= -1.5A,
(Figure 12)
V
DD
= 0.5 x Rated BV
DSS
, I
D
≈
-3.0A,
R
G
= 50
, V
GS
= 10V, (Figures 17, 18)
R
L
= 15.7
for V
DSS =
50V
R
L
= 12.3
for V
DSS
= 40V
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
V
GS
= -10V, I
D
= -3A, V
DS
= 0.8 x Rated BV
DSS,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
On-State Drain Current (Note 2)
I
D(ON)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
r
DS(ON)
g
fs
-
1.000
1.1
1.200
-
S
0.8
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
-
-
-
-
15
30
20
20
30
60
40
40
ns
ns
ns
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Q
g(TOT)
-
8.5
11
nC
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
-
-
-
-
-
3.8
4.7
180
85
30
3.5
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
V
GS
= 0V, V
DS
= -25V, f = 1.0MHz,
(Figure 11)
Measured From the
Contact Screw on Tab
to Center of Die
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Measured From The
Source Lead, 6mm
(0.25in)FromHeaderto
Source Bonding Pad
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
-
7.5
-
nH
Junction to Case
Junction to Ambient
R
θ
JC
R
θ
JA
-
-
-
-
6.4
62.5
o
C/W
o
C/W
Typical Socket Mount
L
S
L
D
G
D
S
IRF9510
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF9510_R4941 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9510H7 | 制造商:Harris Corporation 功能描述: |
| IRF9510L | 功能描述:MOSFET P-CH 100V 4A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF9510PBF | 功能描述:MOSFET P-Chan 100V 4.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9510S | 功能描述:MOSFET P-Chan 100V 4.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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