參數(shù)資料
型號： IRF7807D2
廠商： International Rectifier
英文描述： MOSFET / SCHOTTKY DIODE
中文描述： MOSFET的/肖特基二極管
文件頁數(shù)： 2/8頁
文件大小： 165K
代理商： IRF7807D2
IRF7807D1
2
www.irf.com
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage*
Static Drain-Source
on Resistance*
Gate Threshold Voltage*
Drain-Source Leakage
Current*
Schottky Diode & Body Diode Ratings and Characteristics
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
300 μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t < 10 sec.
50% Duty Cycle, Rectangular
Devices are 100% tested to these parameters.
Parameter
Diode Forward Voltage
Min
Typ
Max
0.5
0.39
Units
V
Conditions
V
SD
T
j
= 25°C, I
s
= 1A, V
GS
=0V
T
j
= 125°C, I
s
= 1A, V
GS
=0V
T
j
= 25°C, I
s
= 7.0A, V
DS
= 16V
di/dt = 100A/μs
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
trr
Qrr
t
on
51
48
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Min
30
Typ
Max
Units
V
Conditions
V
(BR)DSS
V
GS
= 0V, I
D
= 250μA
R
DS
(on)
17
25
m
V
GS
= 4.5V, I
D
= 7A
V
GS
(th)
I
DSS
1.0
V
μ
A
mA
V
DS
= V
GS
,I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V,
T
j
= 125°C
90
7.2
Gate-Source Leakage
Current*
Total Gate Charge
Synch FET*
Total Gate Charge
Control FET*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Charge*
(Q
gs2
+ Q
gd
)
Output Charge*
Gate Resistance
I
GSS
+/- 100
nA
V
GS
= +/-12V
Q
gsync
10.5
14
V
DS
<100mV,
V
GS
= 5V, I
D
= 7A
V
DS
= 16V,
V
GS
= 5V, I
D
= 7A
V
DS
= 16V, I
D
= 7A
Q
gcont
12
17
Q
gs1
2.1
Q
gs2
0.76
nC
Q
gd
Q
SW
2.9
3.66
5.2
Q
oss
R
g
15.3
1.2
18.4
V
DS
= 16V, V
GS
= 0
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相關代理商/技術參數(shù)
參數(shù)描述
IRF7807D2HR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 8.3A 8SOIC - Rail/Tube
IRF7807D2PBF 功能描述:MOSFET 30V FETKY 30 VBRD 25mOhms 2.9nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7807D2PBF 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR TRANSISTOR TYPE:MOSFET
IRF7807D2TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
IRF7807D2TRPBF 功能描述:MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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