參數(shù)資料
型號(hào)： IRF7807D2
廠商： International Rectifier
英文描述： MOSFET / SCHOTTKY DIODE
中文描述： MOSFET的/肖特基二極管
文件頁數(shù)： 1/8頁
文件大?。?/td> 165K
代理商： IRF7807D2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
Symbol
V
DS
V
GS
I
D
Max.
30
±12
8.3
6.6
66
2.5
1.6
3.5
2.2
Units
25°C
70°C
A
I
DM
P
D
25°C
70°C
Schottky and Body Diode
Average ForwardCurrent
Junction & Storage Temperature Range
25°C
70°C
I
F
(AV)
A
T
J
,
T
STG
–55 to 150
°C
Co-Pack N-channel HEXFET
Power MOSFET
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
FETKY
MOSFET / SCHOTTKY DIODE
Absolute Maximum Ratings
Parameter
Maximum Junction-to-Ambient
www.irf.com
Max.
50
Units
°C/W
R
θ
JA
Thermal Resistance
V
W
Description
The FETKY
family of Co-Pack HEXFET
MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Top View
8
1
2
3
4
5
6
7
A/S
A/S
A/S
G
K/D
K/D
D
K/D
K/D
IRF7807D1
PD- 93761
1
11/8/99
IRF7807D1
30V
25m
14nC
5.2nC
18.4nC
V
DS
R
DS(on)
Q
g
Q
sw
Q
oss
Device Features (Max Values)
SO-8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7807D2HR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 8.3A 8SOIC - Rail/Tube
IRF7807D2PBF 功能描述:MOSFET 30V FETKY 30 VBRD 25mOhms 2.9nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7807D2PBF 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR TRANSISTOR TYPE:MOSFET
IRF7807D2TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
IRF7807D2TRPBF 功能描述:MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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