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參數(shù)資料
| 型號： | IRF7507PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 224K |
| 代理商： | IRF7507PBF |
IRF7507PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
20
—
P-Ch -20
—
N-Ch
—
0.041
P-Ch
— -0.012 —
— 0.085 0.14
— 0.120 0.20
—
0.17 0.27
—
0.28 0.40
N-Ch 0.7
—
P-Ch -0.7
—
N-Ch 2.6
—
P-Ch 1.3
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-P
––
—
N-Ch
––
5.3
P-Ch
—
5.4
N-Ch
––
0.84
P-Ch
—
0.96
N-Ch
––
2.2
P-Ch
—
2.4
N-Ch
—
5.7
P-Ch
—
9.1
N-Ch
—
24
P-Ch
—
35
N-Ch
—
15
P-Ch
—
38
N-Ch
—
16
P-Ch
—
43
N-Ch
—
260
P-Ch
—
240
N-Ch
—
130
P-Ch
—
130
N-Ch
—
61
P-Ch
—
64
Conditions
N-Ch
—
—
—
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 4.5V, I
D
= 1.7A
V
GS
= 2.7V, I
D
= 0.85A
V
GS
= -4.5V, I
D
=-1.2A
V
GS
= -2.7V, I
D
=-0.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 10V, I
D
= 0.85A
V
DS
= -10V, I
D
= -0.6A
V
DS
= 16 V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
= 16 V, V
GS
= 0V, T
J
= 125°C
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= ± 12V
—
—
—
—
1.0
-1.0
25
-25
±100
8.0
8.2
1.3
1.4
3.3
3.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
GSS
$
Gate-to-Source Forward Leakage
pF
!
"
#
$
$
%&'&(
)
)
!
"
*
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
Notes:
N-Channel I
SD
≤
P-Channel I
SD
≤
1.2A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
,
di/dt
≤
66A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
≤
150°C
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
39
—
52
—
37
—
63
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.25
-1.25
19
-14
1.2
-1.2
59
78
56
95
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
S
= -1.2A, V
GS
= 0V
N-Channel
T
= 25°C, I
F
= 1.7A, di/dt = 100A/μs
P-Channel
T
J
= 25°C, I
F
= -1.2A, di/dt = -100A/μs
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
+
,-
N-Channel
I
D
= 1.7A, V
DS
= 16V, V
GS
= 4.5V
P-Channel
I
D
= -1.2A, V
DS
= -16V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 1.7A, R
G
= 6.0
,
R
D
= 5.7
P-Channel
V
DD
= -10V, I
D
= -1.2A, R
G
= 6.0
.
R
D
= 8.3
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
/
0
"
%)(
"
0%)(
!
**)
$
**)
-
Pulse width
≤
300μs; duty cycle
≤
2%
Surface mounted on FR-4 board, t
≤
10sec.
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