參數(shù)資料
型號(hào): IRF7503
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
中文描述: 功率MOSFET(減振鋼板基本\u003d 30V的,的Rds(on)\u003d 0.135ohm)
文件頁數(shù): 4/8頁
文件大?。?/td> 114K
代理商: IRF7503
IRF7503
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
0
100
200
300
400
1
10
100
C
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
V
G
A
FOR TEST CIRCUIT
SEE FIGURE 9
V = 24V
V = 15V
I = 1.7A
0.1
1
10
100
0.4
0.8
1.2
1.6
2.0
T = 25°C
T = 150°C
V = 0V
V , Source-to-Drain Voltage (V)
I
S
A
0.1
1
10
100
1
10
100
V , Drain-to-Source Voltage (V)
I
D
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25°C
T = 150°C
Single Pulse
1ms
10ms
A
100μs
10μs
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