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參數(shù)資料
| 型號： | IRF7503 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=30V, Rds(on)=0.135ohm) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 0.135ohm） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | IRF7503 |
IRF7503
PD - 9.1266G
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
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Generation V Technology
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Ultra Low On-Resistance
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Dual N-Channel MOSFET
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Very Small SOIC Package
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Low Profile (<1.1mm)
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Available in Tape & Reel
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Fast Switching
V
DSS
= 30V
R
DS(on)
= 0.135
HEXFET
Power MOSFET
Description
Micro8
D1
D 1
D2
D 2
G1
S 2
G2
S 1
Top View
8
1
2
3
4
5
6
7
8/25/97
Thermal Resistance
Parameter
Max.
2.4
1.9
14
1.25
10
± 20
5.0
-55 to + 150
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Absolute Maximum Ratings
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
Parameter
Typ.
–––
Max.
100
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7504 | Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm) |
| IRF7506 | Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm) |
| IRF7507PBF | HEXFET㈢Power MOSFET |
| IRF7507 | Power MOSFET(Vdss=+-20V) |
| IRF7700 | Power MOSFET(Vdss=-20V) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7503PBF | 制造商:International Rectifier 功能描述:MOSFET DUAL NN MICRO-8 制造商:International Rectifier 功能描述:MOSFET, DUAL, NN, MICRO-8 制造商:International Rectifier 功能描述:MOSFET, DUAL, NN, MICRO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:8 ;RoHS Compliant: Yes |
| IRF7503TR | 功能描述:MOSFET 2N-CH 30V 2.4A MICRO8 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7503TRPBF | 功能描述:MOSFET MOSFT DUAL NCh 30V 2.4A Micro 8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7503TRPBF-EL | 制造商:International Rectifier 功能描述: |
| IRF7504 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm) |
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