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參數(shù)資料
| 型號： | IRF7484PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 183K |
| 代理商： | IRF7484PBF |
IRF7484PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.3A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
59
110
1.3
89
170
V
ns
nC
Source-Drain Ratings and Characteristics
110
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
Surface mounted on 1 in square Cu board.
Starting T
J
= 25°C, L = 2.3mH, R
G
= 25
,
I
AS
= 14A. (See Figure 12).
I
SD
≤
14A, di/dt
≤
140A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Limited by T
Jmax
, see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
Parameter
Min. Typ. Max. Units
40
–––
––– 0.040 –––
–––
–––
1.0
–––
40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
69
–––
9.0
–––
16
–––
9.3
–––
5.0
–––
180
–––
58
––– 3520
–––
660
–––
76
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 7.0V, I
D
= 14A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 14A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 8.0V
V
GS
= -8.0V
I
D
= 14A
V
DS
= 32V
V
GS
= 7.0V
V
DD
= 20V
I
D
= 1.0A
R
G
= 6.2
V
GS
= 7.0V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V/°C
m
V
S
10
2.0
–––
20
250
200
-200
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
DSS
Drain-to-Source Leakage Current
S
D
G
2.3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7484Q | 功能描述:MOSFET N-CH 40V 14A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7484QPBF | 制造商:International Rectifier 功能描述:MOSFET, 40V, 14A, 10 MOHM, 69 NC QG, SO-8 - Rail/Tube |
| IRF7484QTRPBF | 功能描述:MOSFET MOSFET, 40V, 14A 10 mOhm, 69 nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7484TR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 40V 14A 8SOIC - Tape and Reel |
| IRF7484TRPBF | 功能描述:MOSFET MOSFT 40V 14A 10mOhm 69nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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