參數(shù)資料
型號: IRF7476
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=12V, Id=15A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 12V的,身份證\u003d 15A條)
文件頁數(shù): 6/8頁
文件大?。?/td> 111K
代理商: IRF7476
IRF7476
6
www.irf.com
Fig 13.
On-Resistance Vs. Gate Voltage
Fig 12.
On-Resistance Vs. Drain Current
Fig 13a&b.
Basic Gate Charge Test Circuit
and Waveform
Fig 14a&b.
Unclamped Inductive Test circuit
and Waveforms
Fig 14c.
Maximum Avalanche Energy
Vs. Drain Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(B R)D SS
I
AS
RG
IAS
0.01
t
p
D.U.T
L
VDS
+
DRIVER
A
15V
20V
25
50
75
100
125
150
0
100
200
300
400
E
A
ID
5.4A
9.6A
12A
TOP
BOTTOM
0
20
40
60
80
100
120
ID , Drain Current (A)
6.5
6.8
7.0
7.3
7.5
RD
)
VGS = 4.5V
2.0
4.0
6.0
8.0
10.0
VGS, Gate -to -Source Voltage (V)
5.00
7.00
9.00
11.00
13.00
15.00
RD
)
ID = 15A
Starting T
j
, Junction Temperature (°C)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7476HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 12V 15A 8-Pin SOIC
IRF7476PBF 功能描述:MOSFET 20V DUAL N-CH HEXFET 8mOhms 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7476PBF 制造商:International Rectifier 功能描述:MOSFET Transistor Transistor Polarity:N
IRF7476TRHR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 12V 15A 8SOIC - Tape and Reel
IRF7476TRPBF 功能描述:MOSFET MOSFT 12V 15A 8mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube