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參數(shù)資料
| 型號(hào)： | IRF7455 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=30V, Rds(on)max=0.0071ohm,Id=15A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）最大值\u003d 0.0071ohm，身份證\u003d 15A條） |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | IRF7455 |
IRF7455
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.5A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
–––
64
99
1.2
96
150
V
ns
nC
Diode Characteristics
2.5
120
A
Parameter
Typ.
–––
–––
–––
Max.
200
15
0.25
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Parameter
Min. Typ. Max. Units
44
–––
–––
37
–––
8.9
–––
13
–––
17
–––
18
–––
51
–––
44
–––
3480
–––
870
–––
100
Conditions
V
DS
= 10V, I
D
= 15A
I
D
= 15A
V
DS
= 24V
V
GS
= 5.0V,
V
DD
= 15V
I
D
= 1.0A
R
G
= 6.0
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
56
13
20
–––
–––
–––
–––
–––
–––
–––
S
nC
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.029 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.00600.0075
––– 0.0069 0.009
–––
V
GS(th)
Gate Threshold Voltage
0.6
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Min. Typ. Max. Units
30
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
V
GS
= 2.8V, I
D
= 3.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
0.010 0.020
–––
–––
–––
–––
–––
2.0
20
100
200
-200
V
μA
nA
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