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參數(shù)資料
| 型號： | IRF7413QPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 268K |
| 代理商： | IRF7413QPBF |
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
Specifically designed for Automotive applications, these HEXFET
Power MOSFET's in SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of these Automotive qualified HEXFET
Power MOSFET's are a 150°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power applications.
This surface mount SO-8 can dramatically reduce board space
and is also available
in Tape & Reel.
SO-8
www.irf.com
1
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Parameter
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energency
Peak Diode Recovery dv/dt
W
mW/°C
mJ
V/ns
E
AS
dv/dt
T
J,
T
STG
Thermal Resistance Ratings
Junction and Storage Temperature Range
°C
Symbol
Parameter
Typ
–––
–––
Max
20
50
Units
R
θ
JL
R
θ
JA
Junction-to-Drain Lead
Junction-to-Ambient
V
Absolute Maximum Ratings
Max
30
± 20
13
9.2
58
2.5
°C/W
5.0
0.02
260
-55 to +150
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7413QPBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET |
| IRF7413QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7413TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R |
| IRF7413TRPBF | 功能描述:MOSFET MOSFT 30V 13A 11mOhm 44nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7413TRPBF-CUT TAPE | 制造商:IR 功能描述:Single N-Channel 30 V 2.5 W 52 nC Hexfet Power Mosfet Surface Mount - SOIC-8 |
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