參數(shù)資料
型號(hào): IRF740A
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 89K
代理商: IRF740A
IRF740A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.48 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
2.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
2
www.irf.com
Parameter
Min. Typ. Max. Units
4.9
–––
–––
––– 36 I
D
= 10A
–––
–––
9.9
–––
–––
16
–––
10
–––
–––
35
–––
–––
24
–––
–––
22
–––
–––
1030
–––
–––
170
–––
–––
7.7
–––
–––
1490
–––
–––
52
–––
–––
61
–––
Conditions
V
DS
= 50V, I
D
= 6.0A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 320V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 200V
I
D
= 10A
R
G
= 10
R
D
= 19.5
,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 320V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 320V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
630
10
12.5
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
T
J
= 25°C, I
F
= 10A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
240
1.9
2.0
360
2.9
V
ns
μC
Diode Characteristics
10
40
A
Parameter
Typ.
–––
0.50
–––
Max.
1.0
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Min. Typ. Max. Units
400
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
–––
–––
–––
–––
–––
0.55
4.0
25
250
100
-100
V
V
GS
= 10V, I
D
= 6.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 400V, V
GS
= 0V
V
DS
= 320V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
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