參數(shù)資料
型號(hào)： IRF7220
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 141K
代理商： IRF7220
IRF7220
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
￡
300μs; duty cycle
￡
2%.
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.5A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
160
147
-1.2
240
220
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
-88
-2.5
A
When mounted on 1 inch square copper board, t<10 sec
S
D
G
Starting T
J
= 25°C, L = 1.8mH
R
G
= 25
W
, I
AS
= 11A. (See Figure 10)
Parameter
Min. Typ. Max. Units
-14
–––
––– -0.006 –––
––– .0082 0.012
––– .0125 0.020
-0.60 –––
8.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
84
–––
13
–––
37
–––
19
–––
420
–––
140
––– 1040
––– 8075
––– 4400
––– 4150
Conditions
V
(BR)DSS
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= -5mA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -11A
V
GS
= -2.5V, I
D
= -8.8A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -11A
V
DS
= -11.2V, V
GS
= 0V
V
DS
= -11.2V, V
GS
= 0V, T
J
= 70°C
V
GS
= -12V
V
GS
= 12V
I
D
= -11A
V
DS
= -10V
V
GS
= -5.0V
V
DD
= -10V
I
D
= -11A
R
G
= 0.90
W
R
D
= 6.2
W
V
GS
= 0V
V
DS
= -10V
= 1.0MHz
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
-5.0
-100
-100
100
125
20
55
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
μA
W
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IRF7220HR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 14V 11A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 14V 11A 8SOIC - Rail/Tube
IRF7220PBF 功能描述:MOSFET 1 P-CH -12V HEXFET 12mOhms 84nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7220TR 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -12V, -11A, 12 mOhm, 84 nC Qg, SO-8
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