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參數(shù)資料
| 型號： | IRF7220PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 141K |
| 代理商： | IRF7220PBF |
Parameter
Max.
-14
±11
±8.8
±88
2.5
1.6
0.02
110
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
W/°C
mJ
V
°C
E
AS
V
GS
T
J,
T
STG
-55 to + 150
03/15/99
IRF7220
HEXFET
Power MOSFET
Parameter
Max.
50
Units
°C/W
R
q
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
SO-8
V
DSS
= -14V
R
DS(on)
= 0.012
W
Description
Absolute Maximum Ratings
W
1
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
PD- 91850B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7220TR | 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -12V, -11A, 12 mOhm, 84 nC Qg, SO-8 |
| IRF7220TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 14V 11A 8-Pin SOIC T/R |
| IRF7220TRPBF | 功能描述:MOSFET MOSFT PCh -12V -11A 12mOhm 84nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF722FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-220AB |
| IRF722R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-220AB |
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