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參數(shù)資料
| 型號(hào)： | IRF6678 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 256K |
| 代理商： | IRF6678 |
IRF6678
www.irf.com
7
Fig 18.
Diode Reverse Recovery Test Circuit for N-Channel
HEXFET
Power MOSFETs
P.W.
Period
di/dt
Diodedv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Reverse
Body Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Current
D =
P.W.
Period
*
V
GS
= 5V for Logic Level Devices
*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
di/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
e
f
d
R
G
V
DD
D.U.T
c
DirectFET
Substrate and PCB Layout, MX Outline
e
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6678PBF | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6678TR1 | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6678TR1PBF | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6678TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6678TRPBF | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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