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參數(shù)資料
| 型號(hào)： | IRF6678 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 256K |
| 代理商： | IRF6678 |
IRF6678
1000
4
www.irf.com
Fig 5.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
Fig 6.
Typical Transfer Characteristics
Fig 7.
Normalized On-Resistance vs. Temperature
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Normalized Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
ID
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
≤
60μs PULSE WIDTH
Tj = 25°C
2.5V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID
2.5V
≤
60μs PULSE WIDTH
Tj = 150°C
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
TD
ID = 29A
VGS = 10V
VGS = 4.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
20
60
100
140
180
220
260
ID, Drain Current (A)
0
5
10
15
20
25
TD
)
TJ = 25°C
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
1
2
3
4
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID
(
)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 15V
≤
60μs PULSE WIDTH
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6678PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6678TR1 | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6678TR1PBF | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6678TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6678TRPBF | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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