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參數資料
| 型號： | IRF6678 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數： | 2/9頁 |
| 文件大小： | 256K |
| 代理商： | IRF6678 |
IRF6678
2
www.irf.com
e
Repetitive rating; pulse width limited by max. junction temperature.
g
Pulse width
≤
400μs; duty cycle
≤
2%.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
24
1.7
2.3
–––
-6.3
–––
–––
–––
–––
–––
43
12
4.0
15
12
19
28
1.0
21
71
27
8.1
5640
1260
570
Max. Units
–––
–––
2.2
3.0
2.25
–––
1.0
150
100
-100
–––
65
–––
–––
BV
DSS
Β
V
DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Diode Characteristics
nC
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
See Fig. 17
nC
ns
pF
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
e
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
Typ.
–––
Max. Units
3.5
I
S
A
I
SM
–––
–––
240
V
SD
t
rr
Q
rr
–––
–––
–––
0.78
43
46
1.2
65
69
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Clamped Inductive Load
V
DS
= 15V, I
D
= 24A
Conditions
= 1.0MHz
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
g
I
D
= 24A
V
DS
= 15V
V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 24A
g
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 30A
g
T
J
= 25°C, I
F
= 24A
di/dt = 100A/μs
g
T
J
= 25°C, I
S
= 24A, V
GS
= 0V
g
I
D
= 24A
V
GS
= 0V
V
DS
= 15V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF6678PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6678TR1 | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6678TR1PBF | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6678TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6678TRPBF | 功能描述:MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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