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參數(shù)資料
| 型號： | IRF6626 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET TM Power MOSFET |
| 中文描述： | 商標的DirectFET功率MOSFET |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 643K |
| 代理商： | IRF6626 |
www.irf.com
3
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Absolute Maximum Ratings
Parameter
Units
W
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Thermal Resistance
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
°C/W
W/°C
0.017
270
-40 to + 150
Max.
2.2
1.4
42
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τ
i (sec)
0.6677 0.000066
1.0463 0.000896
1.5612 0.004386
29.2822 0.686180
25.4550 32
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
τ
i
/
Ri
Ci=
τ
i
/
Ri
τ
4
τ
4
R
4
R
4
τ
τ
A
τ
5
τ
5
R
5
R
5
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6626PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RoHs Compliant |
| IRF6626TR1 | 功能描述:MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6626TR1PBF | 功能描述:MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6626TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6626TRPBF | 功能描述:MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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