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參數(shù)資料
| 型號(hào)： | IRF6626 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET TM Power MOSFET |
| 中文描述： | 商標(biāo)的DirectFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 643K |
| 代理商： | IRF6626 |
www.irf.com
1
11/17/05
IRF6626
Power MOSFET
DirectFET
Description
The IRF6626 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6626 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socke
t.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical On-Resistance vs. Gate Voltage
RoHS compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for both Sync. FET and some Control FET
applications
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.29mH, R
G
= 25
, I
AS
= 13A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
0
10
20
30
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VG
VDS= 24V
VDS= 15V
ID= 13A
DirectFET
ISOMETRIC
MQ
MX
MT
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
A
mJ
A
13
Max.
30
13
72
130
24
±20
16
Q
g tot
19nC
Q
gd
6.7nC
Q
gs2
1.6nC
Q
rr
5.4nC
Q
oss
V
gs(th)
13nC
1.8V
3
4
5
6
7
8
VGS, Gate -to -Source Voltage (V)
0
5
10
15
TS
)
ID = 16A
TJ = 25°C
TJ = 125°C
V
DSS
30V max
V
GS
R
DS(on)
4.0m
@ 10V
R
DS(on)
5.2m
@ 4.5V
±20V max
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6626PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RoHs Compliant |
| IRF6626TR1 | 功能描述:MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6626TR1PBF | 功能描述:MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6626TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6626TRPBF | 功能描述:MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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