參數(shù)資料
型號(hào): IRF6614
廠商: International Rectifier
英文描述: DirectFET Power MOSFET
中文描述: DirectFET功率MOSFET
文件頁(yè)數(shù): 7/9頁(yè)
文件大?。?/td> 259K
代理商: IRF6614
www.irf.com
7
DirectFET
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
Substrate and PCB Layout, ST Outline
Fig 18.
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for N-Channel
HEXFET Power MOSFETs
P.W.
Period
di/dt
Diodedv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Reverse
Body Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
&
&
!"#""
"#""& #
$%%
+
-
+
+
+
-
-
-
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6614TR1 功能描述:MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6614TR1PBF 功能描述:MOSFET MOSFT 40V 55A 8.3mOhm 19nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6614TR1PBF 制造商:International Rectifier 功能描述:MOSFET
IRF6614TRPBF 功能描述:MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6616 功能描述:MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube