參數(shù)資料
型號： IRF520
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 9.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N溝道增強型功率MOS場效應管)
中文描述： 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/7頁
文件大?。?/td> 69K
代理商： IRF520
4-173
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF520
100
100
9.2
6.5
37
±
20
60
0.4
36
-55 to 175
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= 95V, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
V
GS
=
±
20V
I
D
= 5.6A, V
GS
= 10V (Figure 8, 9)
V
DS
≥
50V, I
D
= 5.6A (Figure 12)
V
DD
= 50V, I
D
≈
9.2A, R
G
= 18
, R
L
= 5.5
MOSFET Switching Times are Essentially
Independent of Operating
Temperature
100
-
-
V
Gate to Threshold Voltage
2.0
-
4.0
V
Zero Gate Voltage Drain Current
-
-
250
μ
A
μ
A
-
-
1000
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
9.2
-
-
A
Gate to Source Leakage Current
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
0.25
0.27
Forward Transconductance (Note 2)
2.7
4.1
-
S
Turn-On Delay Time
-
9
13
ns
Rise Time
-
30
63
ns
Turn-Off Delay Time
-
18
70
ns
Fall Time
-
20
59
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 9.2A, V
DS
= 0.8 x Rated BV
DSS
,
I
g(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating
Temperature
-
10
30
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
2.5
-
nC
Gate to Drain “Miller” Charge
-
2.5
-
nC
Input Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 11)
-
350
-
pF
Output Capacitance
-
130
-
pF
Reverse Transfer Capacitance
-
25
-
pF
Internal Drain Inductance
Measured From the Contact
Screw On Tab To Center of
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the Source
Lead, 6mm (0.25in) From
Header to Source Bonding
Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
2.5
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
Free Air Operation
-
-
80
L
D
L
S
D
S
G
IRF520
相關PDF資料
PDF描述
IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N溝道增強型功率MOS場效應管)
IRF540N 30V N-Channel PowerTrench MOSFET
IRF540N Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)
IRF540ZLPBF AUTOMOTIVE MOSFET
IRF540ZPBF AUTOMOTIVE MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IRF520_R4941 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF520A 功能描述:MOSFET 9.2A 100V .4 OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF520CHIP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | CHIP
IRF520FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
IRF520L 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*