參數(shù)資料
型號: IRF540N
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 1/10頁
文件大小: 126K
代理商: IRF540N
1
TM
File Number
4842
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER is a Copyright of Analogy Inc. PSPICE is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
IRF540N
33A, 100V, 0.040 Ohm, N-Channel Power MOSFET
Packaging
JEDEC TO-220AB
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.040
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER
Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
DRAIN
(FLANGE)
GATE
SOURDRAIN
D
G
S
PART NUMBER
PACKAGE
BRAND
IRF540N
TO-220AB
IRF540N
IRF540N
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
100
V
100
V
±
20
V
33
23
Figure 4
A
A
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
0.80
W
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 175
300
260
o
C
o
C
Data Sheet
March 2000
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