參數(shù)資料
型號(hào)： IRF3710L
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份證\u003d 57A條）
文件頁數(shù)： 1/10頁
文件大?。?/td> 184K
代理商： IRF3710L
IRF3710S/L
HEXFET
Power MOSFET
PD -91310C
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-
profile applications.
Absolute Maximum Ratings
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.025
I
D
= 57A
Description
5/13/98
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
57
40
180
3.8
200
1.3
± 20
530
28
20
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
l
Advanced Process Technology
l
Surface Mount (IRF3710S)
l
Low-profile through-hole (IRF3710L)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
D2
TO-262
相關(guān)PDF資料
PDF描述
IRF3710S Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
IRF3710PBF HEXFET Power MOSFET
IRF3710Z AUTOMOTIVE MOSFET
IRF3710ZL AUTOMOTIVE MOSFET
IRF3710ZS AUTOMOTIVE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF3710LPBF 功能描述:MOSFET MOSFT 100V 57A 23mOhm 86.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF3710PBF 功能描述:MOSFET MOSFT 100V 57A 23mOhm 86.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF3710S 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:MOSFET N D2-PAK
IRF3710SHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 57A 3PIN D2PAK - Rail/Tube
IRF3710SPBF 功能描述:MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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