參數(shù)資料
型號: IPB160N04S2-03
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢ - T Power-Transistor
中文描述: 的OptiMOS㈢ -筆電晶體管
文件頁數(shù): 3/8頁
文件大?。?/td> 157K
代理商: IPB160N04S2-03
IPB160N04S2-03
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
C
iss
-
5300
-
pF
Output capacitance
C
oss
-
2150
-
Reverse transfer capacitance
C
rss
-
580
-
Turn-on delay time
t
d(on)
-
27
-
ns
Rise time
t
r
-
45
-
Turn-off delay time
t
d(off)
-
52
-
Fall time
t
f
-
32
-
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
-
27
30
nC
Gate to drain charge
Q
gd
-
46
75
Gate charge total
Q
g
-
123
170
Gate plateau voltage
V
plateau
-
5.2
-
V
Reverse Diode
Diode continuous forward current
I
S
-
-
160
A
Diode pulse current
I
S,pulse
-
-
640
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
-
0.84
1.3
V
1)
Current is limited by bondwire; with an
R
thJC
= 0.5K/W the chip is able to carry 235A at 25°C. For detailed
information see Application Note ANPS071E at
www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
V
DD
=20 V,
V
GS
=10 V,
I
D
=160 A,
R
G
=2.2
V
DD
=32 V,
I
D
=160 A,
V
GS
=0 to 10 V
Rev. 1.0
page 3
2006-03-02
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