參數(shù)資料
型號(hào)： IKB20N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
中文描述： 在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁(yè)數(shù)： 4/15頁(yè)
文件大?。?/td> 435K
代理商： IKB20N60T
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Power Semiconductors
4
Rev. 2.2 Dec-04
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
18
18
223
76
0.51
0.64
1.15
-
-
-
-
-
-
-
ns
T
j
=175
°
C,
V
CC
=400V,
I
C
=20A,
V
GE
=0/15V,
R
G
= 12
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=131nH,
1)
=31pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
176
1.46
18.9
467
-
-
-
-
ns
μC
A
A/
μ
s
T
j
=175
°
C
V
R
=400V,
I
F
=20A,
di
F
/dt
=880A/
μ
s
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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PDF描述
IKP20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
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參數(shù)描述
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