參數(shù)資料
型號(hào)： IKB20N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
中文描述： 在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 2/15頁
文件大小： 435K
代理商： IKB20N60T
Thermal Resistance
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Power Semiconductors
2
Rev. 2.2 Dec-04
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
thJC
TO-220-3-1
TO-247-3-1
TO-263-3-2
TO-220-3-1
TO-247-3-1
TO-263-3-2
TO-220-3-1
TO-247-3-1
TO-263-3-2 (6cm2 Cu)
0.9
Diode thermal resistance,
junction – case
R
thJCD
1.5
Thermal resistance,
junction – ambient
R
thJA
62
40
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=0.2mA
V
GE
= 15V,
I
C
=20A
T
j
=25
°
C
T
j
=175
°
C
V
GE
=0V,
I
F
=20A
T
j
=25
°
C
T
j
=175
°
C
I
C
=290μA,
V
CE
=
V
GE
V
CE
=600V
,
V
GE
=0V
T
j
=25
°
C
T
j
=175
°
C
600
-
-
-
-
1.5
1.9
2.05
-
Diode forward voltage
V
F
-
-
1.65
1.6
2.05
-
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
4.1
-
-
-
-
4.9
-
-
-
11
-
5.7
40
1000
100
-
V
μA
Gate-emitter leakage current
Transconductance
Integrated gate resistor
I
GES
g
fs
R
Gint
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=20A
nA
S
相關(guān)PDF資料
PDF描述
IKP20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKW20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKP03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKB03N120H2 Tantalum Molded Capacitor; Capacitance: .47uF; Voltage: 35V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKB20N60TA 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB20N60TAATMA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel
IKB20N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 40A 166W TO263-3
IKC01 制造商:TE Connectivity 功能描述:PROTECTIVE CABLE CLIP TIE-ON PK25
IKC02 制造商:TE Connectivity 功能描述:PROTECTIVE CABLE CLIP TIE-ON
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