參數(shù)資料
型號: IKB20N60T
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
中文描述: 在IGBT的溝槽場終止技術(shù)和軟,恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù): 11/15頁
文件大?。?/td> 435K
代理商: IKB20N60T
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Power Semiconductors
11
Rev. 2.2 Dec-04
I
r
,
R
600A/μs
900A/μs
1200A/μs
0A
4A
8A
12A
16A
20A
24A
T
J
=25°C
T
J
=175°C
d
r
/
,
D
O
600A/μs
900A/μs
1200A/μs
0A/μs
-150A/μs
-300A/μs
-450A/μs
-600A/μs
-750A/μs
T
J
=25°C
T
J
=175°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(
V
R
= 400V,
I
F
= 20A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(
V
R
=400V,
I
F
=20A,
Dynamic test circuit in Figure E)
I
F
,
F
0V
1V
2V
0A
10A
20A
30A
40A
50A
175°C
T
J
=25°C
V
F
,
F
0°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
1.5V
2.0V
20A
I
F
=40A
10A
V
F
,
FORWARD VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Figure 27. Typical diode forward current as
a function of forward voltage
相關(guān)PDF資料
PDF描述
IKP20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKW20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKP03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKB03N120H2 Tantalum Molded Capacitor; Capacitance: .47uF; Voltage: 35V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel
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