參數(shù)資料
型號： IHW30N90T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
中文描述： 低損耗DuoPack：IGBT的在TrenchStop和場終止技術(shù)與反并聯(lián)二極管
文件頁數(shù)： 3/12頁
文件大?。?/td> 329K
代理商： IHW30N90T
IHW30N90T
Soft Switching Series
q
Power Semiconductors
3
Rev. 2.1 Apr 06
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
45
26
556
29
-
1.8
1.8
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=600V,
I
C
=30A,
V
GE
=0/15V,
R
G
=15
,
mJ
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
44
38
650
41
-
2.4
2.4
-
-
-
-
-
-
-
ns
T
j
=175
°
C
V
CC
=600V,
I
C
=30A,
V
GE
=0/15V,
R
G
= 15
mJ
相關(guān)PDF資料
PDF描述
IKA06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
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IKW20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW30N90T_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
IHW30N90TFKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 900V 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 900V 60A 428W TO247-3
IHW40N120R3FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 80A 429W TO247-3
IHW40N135R3FKSA1 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW40N60R 功能描述:IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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