參數(shù)資料
型號： IHW30N90T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
中文描述： 低損耗DuoPack：IGBT的在TrenchStop和場終止技術(shù)與反并聯(lián)二極管
文件頁數(shù)： 2/12頁
文件大?。?/td> 329K
代理商： IHW30N90T
IHW30N90T
Soft Switching Series
q
Power Semiconductors
2
Rev. 2.1 Apr 06
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
0.35
R
thJCD
1.1
R
thJA
40
K/W
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=30A
T
j
=25
°
C
T
j
=150
°
C
T
j
=175
°
C
V
GE
=0V,
I
F
=10A
T
j
=25
°
C
T
j
=150
°
C
T
j
=175
°
C
I
C
=150
μ
A,
V
CE
=
V
GE
V
CE
=900V
,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
900
-
-
Collector-emitter saturation voltage
-
-
-
1.5
1.7
1.8
1.7
-
-
Diode forward voltage
V
F
-
-
-
1.1
1.0
1.0
1.3
-
-
Gate-emitter threshold voltage
V
GE(th)
I
CES
4.6
5.3
6
V
Zero gate voltage collector current
-
-
-
-
-
-
-
250
2500
600
-
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=20A
nA
S
26
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
2617
96
38
280
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=720V,
I
C
=30A
V
GE
=15V
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
-
13
-
nH
相關(guān)PDF資料
PDF描述
IKA06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
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IKW20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW30N90T_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
IHW30N90TFKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 900V 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 900V 60A 428W TO247-3
IHW40N120R3FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 80A 429W TO247-3
IHW40N135R3FKSA1 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW40N60R 功能描述:IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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