參數(shù)資料
型號(hào)： IHW15N120R2
廠商： INFINEON TECHNOLOGIES AG
英文描述： Reverse Conducting IGBT with monolithic body diode
中文描述： 反向開展與IGBT的單片體二極管
文件頁數(shù)： 3/12頁
文件大小： 364K
代理商： IHW15N120R2
IHW15N120R2
Soft Switching Series
Power Semiconductors
3
Rev. 1.2 May 06
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
1530
49
39
133
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=15A
V
GE
=15V
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
L
E
-
13
-
nH
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-off delay time
Fall time
Turn-off energy
Total switching energy
t
d(off)
t
f
E
off
E
ts
-
-
-
-
282
62
0.9
0.9
-
-
-
-
T
j
=25
°
C,
V
CC
=600V,
I
C
=15A
V
GE
=0 /15V,
R
G
=14.8
,
L
σ
C
σ
2)
=230nH,
2)
=39pF
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-off delay time
Fall time
Turn-off energy
Total switching energy
t
d(off)
t
f
E
off
E
ts
-
-
-
-
342
90
1.3
1.3
-
-
-
-
T
j
=175
°
C
V
CC
=600V,
I
C
=15A,
V
GE
= 0 /15V,
R
G
= 14.8
,
L
σ
=230nH
2)
,
C
σ
=39pF
2)
2)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
相關(guān)PDF資料
PDF描述
IHW15N120R Reverse Conducting IGBT with monolithic body diode
IHW15T120 IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IHW20N120R2 Reverse Conducting IGBT with monolithic body diode
IHW20N120R Reverse Conducting IGBT with monolithic body diode
IHW20T120 Soft Switching Series
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW15N120R2XK 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247
IHW15N120R3 功能描述:IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW15N120R3FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 254W TO247-3
IHW15T120 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW15T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 113W TO247-3
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*