參數(shù)資料
型號(hào)： IHW20T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： Soft Switching Series
中文描述： 軟開關(guān)系列
文件頁數(shù)： 1/14頁
文件大?。?/td> 320K
代理商： IHW20T120
Soft Switching Series
IHW20T120
Power Semiconductors
1
Rev. 2 Apr-04
Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Short circuit withstand time – 10
μ
s
Designed for :
- Soft Switching Applications
- Induction Heating
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in
V
CE(sat)
Very soft, fast recovery anti-parallel EmCon
HE diode
Low EMI
Application specific optimisation of inverse diode
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
G
C
E
T
j,max
Marking
Package
Ordering Code
IHW20T120
1200V
20A
1.7V
150
°
C
H20T120
TO-247AC Q67040-S4652
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Diode surge non repetitive current,
t
p
limited by
T
jmax
T
C
= 25
°
C,
t
p
= 10ms, sine halfwave
T
C
= 25
°
C,
t
p
≤
2.5μs, sine halfwave
T
C
= 100
°
C,
t
p
≤
2.5μs, sine halfwave
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation,
T
C
= 25
°
C
Operating junction temperature
V
CE
I
C
1200
40
20
V
A
I
Cpuls
-
60
60
I
F
23
13
I
Fpuls
I
FSM
36
50
130
120
A
V
GE
t
SC
±
20
10
V
μ
s
P
tot
T
j
T
stg
-
178
W
-40...+150
°
C
°
C
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-55...+150
260
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
相關(guān)PDF資料
PDF描述
IHW30N100R Reverse Conducting IGBT with monolithic body diode
IHW30N120R IGBT with monolithic body diode for soft switching Applications
IHW30N60T Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode
IHW30N90T Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
IKA06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW20T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 20A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 40A 178W TO247-3
IHW25N120R2 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 25A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW25N120R2FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 50A 365W TO247-3
IHW30N100R 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1000V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N100R_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
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