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參數(shù)資料
| 型號： | IDT7005L55FB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | Single, Ultra Low Cost, RRIO CMOS Amplifier |
| 中文描述： | 8K X 8 DUAL-PORT SRAM, 55 ns, QFP68 |
| 封裝： | 0.970 X 0.970 INCH, 0.080 INCH HEIGHT, QFP-68 |
| 文件頁數(shù)： | 20/20頁 |
| 文件大?。?/td> | 189K |
| 代理商： | IDT7005L55FB |
6.42
IDT7005S/L
High-Speed 8K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
9
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. To access RAM,
CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part number indicates power rating (S or L).
6. Industrial temperature: for other speeds, packages and powers contact your sales office.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5,6)
Symbol
Parameter
7005X15
Com'l Only
7005X17
Com'l Only
7005X20
Com'l &
Military
7005X25
Com'l &
Military
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
15
____
17
____
20
____
25
____
ns
tEW
Chip Enable to End-of-Write(3)
12
____
12
____
15
____
20
____
ns
tAW
Address Valid to End-of-Write
12
____
12
____
15
____
20
____
ns
tAS
Address Set-up Time
(3)
0
____
0
____
0
____
0
____
ns
tWP
Write Pulse Width
12
____
12
____
15
____
20
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
10
____
10
____
15
____
15
____
ns
tHZ
Output High-Z Time
(1,2)
____
10
____
10
____
12
____
15
ns
tDH
Data Hold Time(4)
0
____
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
10
____
10
____
12
____
15
ns
tOW
Output Active from End-of-Write
(1,2,4)
0
____
0
____
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
5
____
ns
2738 tbl 14a
Symbol
Parameter
7005X35
Com'l, Ind
& Military
7005X55
Com'l, Ind
& Military
7005X70
Military Only
Unit
Min.
Max.
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
35
____
55
____
70
____
ns
tEW
Chip Enable to End-of-Write(3)
30
____
45
____
50
____
ns
tAW
Address Valid to End-of-Write
30
____
45
____
50
____
ns
tAS
Address Set-up Time
(3)
0
____
0
____
0
____
ns
tWP
Write Pulse Width
25
____
40
____
50
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
15
____
30
____
40
____
ns
tHZ
Output High-Z Time
(1,2)
____
15
____
25
____
30
ns
tDH
Data Hold Time(4)
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
15
____
25
____
30
ns
tOW
Output Active from End-of-Write
(1,2,4)
0
____
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
2738 tbl 14b
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7005L55G | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
| IDT7005L55GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 55NS 68PGA |
| IDT7005L55J | 功能描述:IC SRAM 64KBIT 55NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7005L55J8 | 功能描述:IC SRAM 64KBIT 55NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7005L55JB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
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