參數(shù)資料
型號(hào): IBMN364404CT3C-260
英文描述: x4 SDRAM
中文描述: x4內(nèi)存
文件頁數(shù): 24/71頁
文件大?。?/td> 1251K
代理商: IBMN364404CT3C-260
IBMN364164
IBMN364404
64Mb Synchronous DRAM - Die Revision C
IBMN364804
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 24 of 71
19L3265.E35856B
1/01
Burst Read Followed by the Precharge Command
Burst Write Followed by the Precharge Command
COMMAND
READ Ax
0
NOP
NOP
NOP
NOP
NOP
NOP
*
NOP
t
CK2,
DQs
CAS latency = 2
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT Ax
0
DOUT Ax
1
DOUT Ax
2
DOUT Ax
3
Precharge A
t
RP
Bank A can be reactivated at completion of t
RP
.
*
(Burst Length = 4, CAS Latency = 2)
COMMAND
NOP
NOP
NOP
*
WRITE Ax
0
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
NOP
NOP
DIN Ax
0
DIN Ax
1
Bank can be reactivated at completion of t
RP
.
t
DPL
and t
RP
are functions of clock cycle and speed sort.
See the Clock Frequency and Latency table.
*
Activate
Bank Ax
t
CK2,
DQs
CAS latency = 2
t
DPL
t
RP
Precharge A
(Burst Length = 2, CAS Latency = 2)
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