參數(shù)資料
型號(hào): HYS72T64301HP
廠商: QIMONDA
英文描述: 240-Pin Registered DDR2 SDRAM Modules
中文描述: 240針DDR2 SDRAM的注冊(cè)模塊
文件頁(yè)數(shù): 22/42頁(yè)
文件大?。?/td> 1068K
代理商: HYS72T64301HP
Internet Data Sheet
Rev. 1.0, 2006-10
09152006-R5MQ-5KS2
22
HYS72T64301HP–[3S/3.7]–A
Registered DDR2 SDRAM Modules
TABLE 16
DRAM Component Timing Parameter by Speed Grade - DDR2–533
Parameter
Symbol
DDR2–533
Unit
Note
1)2)3)4)5)
6)7)
Min.
Max.
DQ output access time from CK / CK
CAS A to CAS B command period
CK, CK high-level width
CKE minimum high and low pulse width
CK, CK low-level width
Auto-Precharge write recovery + precharge
time
Minimum time clocks remain ON after CKE
asynchronously drops LOW
DQ and DM input hold time (differential data
strobe)
DQ and DM input hold time (single ended data
strobe)
DQ and DM input pulse width (each input)
DQS output access time from CK / CK
DQS input low (high) pulse width (write cycle)
DQS-DQ skew (for DQS & associated DQ
signals)
Write command to 1st DQS latching transition
DQ and DM input setup time (differential data
strobe)
DQ and DM input setup time (single ended data
strobe)
DQS falling edge hold time from CK (write
cycle)
DQS falling edge to CK setup time (write cycle)
t
DSS
Clock half period
Data-out high-impedance time from CK / CK
Address and control input hold time
Address and control input pulse width
(each input)
Address and control input setup time
DQ low-impedance time from CK / CK
DQS low-impedance from CK / CK
Mode register set command cycle time
OCD drive mode output delay
Data output hold time from DQS
Data hold skew factor
t
AC
t
CCD
t
CH
t
CKE
t
CL
t
DAL
–500
2
0.45
3
0.45
WR +
t
RP
+500
0.55
0.55
ps
t
CK
t
CK
t
CK
t
CK
t
CK
8)18)
t
DELAY
t
IS
+
t
CK
+
t
IH
––
ns
9)
t
DH
(base)
225
––
ps
10)
t
DH1
(base)
–25
ps
11)
t
DIPW
t
DQSCK
t
DQSL,H
t
DQSQ
0.35
–450
0.35
+
450
300
t
CK
ps
t
CK
ps
11)
t
DQSS
t
DS
(base)
– 0.25
100
+ 0.25
t
CK
ps
11)
t
DS1
(base)
–25
ps
11)
t
DSH
0.2
t
CK
0.2
MIN. (
t
CL,
t
CH
)
375
0.6
t
CK
ps
ps
t
CK
t
HP
t
HZ
t
IH
(base)
t
IPW
12)
t
AC.MAX
13)
11)
t
IS
(base)
t
LZ(DQ)
t
LZ(DQS)
t
MRD
t
OIT
t
QH
t
QHS
250
2
×
t
AC.MIN
t
AC.MIN
2
0
t
HP
t
QHS
t
AC.MAX
t
AC.MAX
12
400
ps
ps
ps
t
CK
ns
ps
11)
14)
14)
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