參數(shù)資料
型號: HYB18H256321BF-12
廠商: QIMONDA AG
元件分類: DRAM
英文描述: 256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
中文描述: 8M X 32 SYNCHRONOUS GRAPHICS RAM MODULE, 0.22 ns, PBGA136
封裝: GREEN, PLASTIC, TFBGA-136
文件頁數(shù): 29/41頁
文件大?。?/td> 1302K
代理商: HYB18H256321BF-12
HYB18H256321BF
256-Mbit GDDR3
Internet Data Sheet
Rev. 0.80, 2007-09
09132007-07EM-7OYI
29
4.8
Termination IV Characteristic at 120 Ohms
Figure 16
represents the DQ or ADD/CMD termination Pull-Up IV characteristic under process, voltage and temperature best
and worst case conditions. The actual termination Pull-Up current must lie between these two bounding curves. The value of
the external ZQ resistor is 240
Ω
, setting the nominal termination impedance to 120
Ω
. (Extended Mode Register programmed
to ZQ/2 for DQ terminations or CKE = 0 at the RES transition during Power-Up for ADD/CMD terminations).
FIGURE 16
120 Ohm Active Termination Characteristic
Table 16
lists the numerical values of the minimum and maximum allowed values of the termination IV characteristic.
TABLE 16
Programmed Terminator Characteristics of 120 Ohm
Voltage (V)
Terminator Pull-Up Current (mA)
Voltage (V)
Terminator Pull-Up Current (mA)
Minimum
Maximum
Minimum
Maximum
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-0.81
-1.60
-2.34
-3.06
-3.74
-4.39
-5.00
-5.58
-6.12
-6.63
-1.09
-2.14
-3.15
-4.12
-5.06
-5.94
-6.79
-7.59
-8.35
-9.06
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-7.11
-7.57
-8.02
-8.47
-8.91
-9.35
-9.79
-10.22
-9.72
-10.42
-11.00
-11.67
-12.33
-13.05
-13.75
-14.43
-15.08
-15.69
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