參數(shù)資料
型號: HY63V8400
廠商: Hynix Semiconductor Inc.
英文描述: 512Kx8Bit CMOS FAST SRAM
中文描述: 512Kx8Bit的CMOS快速靜態(tài)存儲器
文件頁數(shù): 3/8頁
文件大?。?/td> 108K
代理商: HY63V8400
HY63V8400 Series
Rev.02 / Jan.99
3
AC CHARACTERISTICS
(Vcc = 3.3V ± 0.3V, T
A
= 0
°
C to 70
°
C, unless otherwise specified.)
10ns
12ns
15ns
#
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Unit
READ CYCLE
1
tRC
2
tAA
3
tACS
4
tOE
5
tCLZ
6
tOLZ
7
tCHZ
8
tOHZ
9
tOH
WRITE CYCLE
10
tWC
11
tCW
12
tAW
13
tAS
14
tWP
15
tWP1
16
tWR
17
tWHZ
18
tDW
19
tDH
20
tOW
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Deselecting to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
10
-
-
-
3
0
0
0
3
-
12
-
-
-
3
0
0
0
3
-
15
-
-
-
3
0
0
0
3
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
10
5
-
-
5
5
-
12
12
6
-
-
6
6
-
15
15
7
-
-
7
7
-
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width(/OE High)
Write Pulse Width(/OE Low)
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
10
7
7
0
7
10
0
0
5
0
3
-
-
-
-
-
-
-
5
-
-
-
12
8
8
0
8
12
0
0
6
0
3
-
-
-
-
-
-
-
6
-
-
-
15
10
10
0
10
15
0
0
7
0
3
-
-
-
-
-
-
-
7
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE : Above parameters are also guaranteed at industrial temperature range.
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