參數(shù)資料
型號: HY5PS1G831ALFP-C4
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, PBGA68
封裝: FBGA-68
文件頁數(shù): 10/36頁
文件大?。?/td> 574K
代理商: HY5PS1G831ALFP-C4
Rev. 0.7 / Oct. 2007
18
HY5PS1G431A(L)FP
HY5PS1G831A(L)FP
HY5PS1G1631A(L)FP
Note :
1. VDDQ = 1.8 +/- 0.1V ; VDD = 1.8 +/- 0.1V (exclusively VDDQ = 1.9 +/- 0.1V ; VDD = 1.9 +/- 0.1V for C3 speed
grade)
2. IDD specifications are tested after the device is properly initialized
3. Input slew rate is specified by AC Parametric Test Condition
4. IDD parameters are specified with ODT disabled.
5. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with
all combinations of EMRS bits 10 and 11.
6.
Definitions for IDD
LOW is defined as Vin
≤ VILAC(max)
HIGH is defined as Vin
≥ VIHAC(min)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks)
for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per
clock) for DQ signals not including masks or strobes.
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