參數(shù)資料
型號: HY29F400BT90
廠商: Hynix Semiconductor Inc.
英文描述: 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
中文描述: 4兆位(512Kx8/256Kx16)5伏只閃存
文件頁數(shù): 28/40頁
文件大小: 509K
代理商: HY29F400BT90
28
Rev. 5.2/May 01
HY29F400
AC CHARACTERISTICS
Notes:
1. PA = Program Address, PD = Program Data, D
is the true data at the program address.
2. Commands shown are for Word mode operation.
3. V
CC
shown only to illustrate t
VCS
measurement references. It cannot occur as shown during a valid command sequence.
Figure 17. Program Operation Timings
Addresses
CE#
t
WC
0x555
PA
PA
PA
OE#
t
AS
t
AH
t
WPH
t
WP
t
GHWL
t
CS
WE#
Data
t
DS
t
DH
0xA0
PD
Status
t
WHWH1
RY/BY#
t
BUSY
t
RB
t
VCS
V
CC
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
D
OUT
t
CH
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相關代理商/技術參數(shù)
參數(shù)描述
HY29F400BT-90 制造商:HYUNDAI 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP
HY29F400TG45 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400TG-45 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM
HY29F400TG55 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400TG-55 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM