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參數(shù)資料
| 型號(hào)： | HY29F400BT90 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| 中文描述： | 4兆位（512Kx8/256Kx16）5伏只閃存 |
| 文件頁(yè)數(shù)： | 19/40頁(yè) |
| 文件大?。?/td> | 509K |
| 代理商： | HY29F400BT90 |
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19
Rev. 5.2/May 01
HY29F400
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#,
CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by asserting any one of
the following conditions: OE# = V
IL
, CE# = V
IH
, or
WE# = V
IH
. To initiate a write cycle, CE# and WE#
must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
automatically reset to the Read mode on power-
up.
Sector Protection
Additional data protection is provided by the
HY29F400
’
s sector protect feature, described pre-
viously, which can be used to protect sensitive
areas of the Flash array from accidental or unau-
thorized attempts to alter the data.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F400TG45 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400TG55 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400TG90 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BG-45 | x8/x16 Flash EEPROM |
| HY29F400BG-55 | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F400BT-90 | 制造商:HYUNDAI 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP |
| HY29F400TG45 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400TG-45 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F400TG55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400TG-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
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