參數資料
型號： HY27UF081G2M-TEB
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述： 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
封裝： 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
文件頁數： 48/48頁
文件大?。?/td> 476K
代理商： HY27UF081G2M-TEB
Rev 0.7 / Apr. 2005
48
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
2. Automatic sleep mode for low power consumption
The device provides the automatic sleep function for low power consumption.
The device enters the automatic sleep mode by keeping CE# at VIH level for 10us without any additional command
input, and exits simply by lowering CE# to VIL level.
Typically, consecutive operation is executable right after deactivating the automatic sleep mode, while
tCS of 2us
is
required prior to following operation as shown in Fig.34.
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Figure 35: tCS setting when deactivating the auto sleep mode
相關PDF資料
PDF描述
HY27UF081G2M-TEP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TES 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIS 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
相關代理商/技術參數
參數描述
HY27UF081G2M-TEP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TES 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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