參數(shù)資料
型號： HY27UF081G2M-TEB
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述： 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
封裝： 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
文件頁數(shù)： 17/48頁
文件大小： 476K
代理商： HY27UF081G2M-TEB
Rev 0.7 / Apr. 2005
17
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Parameter
Symbol
Min
Typ
Max
Unit
Valid Block Number
N
VB
1004
1024
Blocks
Table 7: Valid Blocks Number
Symbol
Parameter
Value
Unit
1.8V
3.3V
T
A
Ambient Operating Temperature
(Commercial Temperature Range)
0 to 70
0 to 70
℃
Ambient Operating Temperature
(Extended Temperature Range)
-25 to 85
-25 to 85
℃
Ambient Operating Temperature
(Industrial Temperature Range)
-40 to 85
-40 to 85
℃
T
BIAS
Temperature Under Bias
-50 to 125
-50 to 125
℃
T
STG
Storage Temperature
-65 to 150
-65 to 150
℃
V
IO
(2)
Input or Output Voltage
-0.6 to 2.7
-0.6 to 4.6
V
Vcc
Supply Voltage
-0.6 to 2.7
-0.6 to 4.6
V
Table 8: Absolute maximum ratings
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
the device at these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
相關(guān)PDF資料
PDF描述
HY27UF081G2M-TEP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TES 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIS 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27UF081G2M-TEP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TES 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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