參數(shù)資料
型號： HY27UF081G2M-TEB
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述： 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
封裝： 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
文件頁數(shù)： 19/48頁
文件大小： 476K
代理商： HY27UF081G2M-TEB
Rev 0.7 / Apr. 2005
19
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Parameter
Symbol
Test Conditions
1.8Volt
3.3Volt
Unit
Min
Typ
Max
Min
Typ
Max
Operating
Current
Sequential
Read
I
CC1
t
RC
=60ns
(1)
,
CE#=V
IL
, I
OUT
=0mA
-
8
15
-
10
20
mA
Program
I
CC2
-
-
8
15
-
10
20
mA
Erase
I
CC3
-
-
8
15
-
10
20
mA
Stand-by Current (TTL)
I
CC4
CE#=V
IH
,
PRE=WP#=0V/Vcc
-
-
1
-
1
mA
Stand-by Current (CMOS)
I
CC5
CE#=Vcc-0.2,
PRE=WP#=0V/Vcc
-
10
50
-
10
50
uA
Input Leakage Current
I
LI
V
IN
=0 to 3.6V
-
-
±
10
-
-
±
10
uA
Output Leakage Current
I
LO
V
OUT
=0 to 3.6V
-
-
±
10
-
-
±
10
uA
Input High Voltage
V
IH
-
Vcc-0.4
-
Vcc+
0.3
2
-
Vcc+
0.3
V
Input Low Voltage
V
IL
-
-0.3
-
0.4
-0.3
-
0.8
V
Output High Voltage
Level
V
OH
I
OH
=-100uA
Vcc-0.1
-
-
-
-
-
V
I
OH
=-400uA
-
-
-
2.4
-
-
V
Output Low Voltage Level
V
OL
I
OL
=100uA
-
-
0.1
-
-
-
V
I
OL
=2.1mA
-
-
-
-
-
0.4
V
Output Low Current
(RB#)
I
OL
(RB#)
V
OL
=0.1V
3
4
-
-
-
-
mA
V
OL
=0.4V
-
-
-
8
10
-
mA
Table 9: DC and Operating Characteristics
Parameter
Value
1.8Volt
3.3Volt
Input Pulse Levels
0V to Vcc
0.4V to 2.4V
Input Rise and Fall Times
5ns
5ns
Input and Output Timing Levels
Vcc / 2
1.5V
Output Load (1.7V - 1.95Volt & 2.7V - 3.6V)
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
Output Load (3.0V - 3.6V)
-
1 TTL GATE and CL=100pF
Table 10: AC Conditions
NOTE:
1. These parameters are applied to the errata.
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27UF081G2M-TEP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TES 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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