參數(shù)資料
型號(hào): HY27SF081G2M-TIP
廠(chǎng)商: HYNIX SEMICONDUCTOR INC
元件分類(lèi): DRAM
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
文件頁(yè)數(shù): 41/48頁(yè)
文件大?。?/td> 476K
代理商: HY27SF081G2M-TIP
Rev 0.7 / Apr. 2005
41
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
5. APPENDIX : Extra Features
5.1 Automatic Page0 Read after Power Up
The timing diagram related to this operation is shown in Fig. 24
Due to this functionality the CPU can directly download the boot loader from the first page of the NAND flash, storing
it inside the internal cache and starting the execution after the download completed.
5.2 Addressing for program operation
Within a block, the pages must be programmed consecutively from LSB (least significant bit) page of the block to MSB
(most significant bit) page of the block. Random address programming is prohibited. See Fig. 28.
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PDF描述
HY27SF081G2M-TIS 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TMB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TMP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TMS 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27SF081G2M-TIS 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TMB 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TMP 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TMS 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TPCB 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory