參數(shù)資料
型號(hào): HY27SF081G2M-TIP
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
文件頁(yè)數(shù): 34/48頁(yè)
文件大?。?/td> 476K
代理商: HY27SF081G2M-TIP
Rev 0.7 / Apr. 2005
34
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
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Figure 22: exit from cache read in 5ms when device internally is reading
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27SF081G2M-TIS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TMB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TMP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TMS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TPCB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory