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參數(shù)資料
| 型號： | HX6408KBNN |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 25 ns, UUC35 |
| 封裝： | DIE |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 101K |
| 代理商： | HX6408KBNN |
5
HX6408
DC ELECTRICAL CHARACTERISTICS
(1) Worst case operating conditions: VDD=3.0 V to 3.6 V, -55
°
C to +125
°
C, post total dose at 25
°
C.
(2) All inputs switching. DC average current.
DUT
output
Valid low
output
Vref1
CL>50 pF*
249
Tester Equivalent Load Circuit
2.2 V
Valid high
output
Vref2
-
+
-
+
*CL = 5 pF for TWLQZ, TSHQZ, TPLQZ, and TGHQZ
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相關(guān)代理商/技術(shù)參數(shù) |
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| HX6408KEFM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408KEFN | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408KEHM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408KEHN | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408KENM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
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