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參數(shù)資料
| 型號： | HX6408KBNN |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 25 ns, UUC35 |
| 封裝： | DIE |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 101K |
| 代理商： | HX6408KBNN |
3
HX6408
Total Dose
≥
3x10
5
(Optional 1X10
6
)
rad(SiO
2
)
rad(Si)/s
Transient Dose Rate Upset
≥
1x10
10
≥
1x10
12
Transient Dose Rate Survivability
rad(Si)/s
Soft Error Rate
<1x10
-10
upsets/bit-day
Neutron Fluence
≥
1x10
14
N/cm
2
Parameter
Limits (2)
Test Conditions
RADIATION HARDNESS RATINGS (1)
Units
T
A
=25
°
C
Pulse width
≤
50 ns
VDD>3.6V, TA=25
°
C
Total Ionizing Radiation Dose
The SRAM will meet all stated functional and electrical
specifications over the entire operating temperature range
after the specified total ionizing radiation dose. All electrical
and timing performance parameters will remain within speci-
fications after rebound at VDD = 3.6 V and T =125
°
C ex-
trapolated to ten years of operation. Total dose hardness is
assured by wafer level testing of process monitor transistors
and RAM product using 10 KeV X-ray and Co60 radiation
sources. Transistor gate threshold shift correlations have
been made between 10 KeV X-rays applied at a dose rate of
1x10
5
rad(SiO
)/min at T = 25
°
C and gamma rays (Cobalt 60
source) to ensure that wafer level X-ray testing is consistent
with standard military radiation test environments.
Transient Pulse Ionizing Radiation
The SRAM is capable of writing, reading, and retaining
stored data during and after exposure to a transient ioniz-
ing radiation pulse, up to the specified transient dose rate
upset specification, when applied under recommended
operating conditions. To ensure validity of all specified
performance parameters before, during, and after radiation
(timing degradation during transient pulse radiation is
≤
10%), it is suggested that stiffening capacitance be
placed near the package VDD and VSS, with a maximum
inductance between the package (chip) and stiffening ca-
pacitance of 0.7 nH per part. If there are no operate-
through or valid stored data requirements, typical circuit
board mounted de-coupling capacitors are recommended.
The SRAM will meet any functional or electrical specifica-
(1) Device will not latch up due to any of the specified radiation exposure conditions.
(2) Operating conditions (unless otherwise specified): VDD=3.0 V to 3.6 V, TA=-55
°
C to 125
°
C.
1 MeV equivalent energy,
Unbiased, T
A
=25
°
C
T
=85
°
C, Adams 90%
worst case environment
Pulse width
≤
50 ns, X-ray,
VDD=3.6 V, T
A
=25
°
C
RADIATION CHARACTERISTICS
tion after exposure to a radiation pulse up to the
transientdose rate survivability specification, when ap-
plied under recommended operating conditions. Note
that the current conducted during the pulse by the RAM
inputs, outputs, and power supply may significantly ex-
ceed the normal operating levels. The application design
must accommodate these effects.
Neutron Radiation
The SRAM will meet any functional or timing specification
after exposure to the specified neutron fluence under
recommended operating or storage conditions. This as-
sumes an equivalent neutron energy of 1 MeV.
Soft Error Rate
The SRAM is capable of meeting the specified Soft Error
Rate (SER), under recommended operating conditions.
This hardness level is defined by the Adams 90% worst
case cosmic ray environment for geosynchronous orbits.
Latchup
The SRAM will not latch up due to any of the above
radiation exposure conditions when applied under recom-
mended operating conditions. Fabrication with the SIMOX
substrate material provides oxide isolation between adja-
cent PMOS and NMOS transistors and eliminates any
potential SCR latchup structures. Sufficient transistor body
tie connections to the p- and n-channel substrates are
made to ensure no source/drain snapback occurs.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HX6408KEFM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
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| HX6408KEHM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408KEHN | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408KENM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
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