參數(shù)資料
型號(hào)： HUFA75429D3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： N-Channel UltraFET MOSFETs 60V, 20A, 25mз
中文描述： 20 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 290K
代理商： HUFA75429D3S
2002 Fairchild Semiconductor Corporation
Rev. A
H
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristics
T
A
= 25
°
C unless otherwise noted
1
10
100
1
10
100
500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMITED BY r
DS(ON)
OPAREA MAY BE
100
μ
s
10ms
1ms
1
10
100
0.01
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
10
100
500
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515.
0
10
20
30
40
50
3
4
5
6
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
10
20
30
40
50
0
0.5
1.0
1.5
2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5V
T
C
= 25
o
C
V
GS
= 7V
V
GS
= 10V
V
GS
= 5V
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 20A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUFA75429D3ST 功能描述:MOSFET N-Ch UltraFET 60V 0.025 Ohm 20a RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75433S3S 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET MOSFETs 60V, 64A, 16mз
HUFA75433S3ST 功能描述:MOSFET 55V 64a 0.016 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75531SK8 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75542P3 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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