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參數(shù)資料
| 型號(hào)： | HUFA75429D3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2W ISOLATED DUAL OUTPUT CONVERTER RoHS Compliant: Yes |
| 中文描述： | 20 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 290K |
| 代理商： | HUFA75429D3ST |
2002 Fairchild Semiconductor Corporation
March 2002
Rev. A
H
HUFA75429D3S
N-Channel UltraFET
MOSFETs
60V, 20A, 25m
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET
process. This advanced pro-
cess technology achieves very low on-resistance per silicon
area, resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications where
power efficiency is important, such as switching regulators,
switching convertors, motor drivers, relay drivers, low-volt-
age bus switches.
Applications
Motor & Load Control
Powertrain Management
Features
175°C Maximum Junction Temperature
UIS Capability (Single Pulse and Repetitive Pulse)
Ultra-Low On-Resistance r
DS(ON)
= 0.025
,
V
GS
=
10V
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 125
o
C, V
GS
= 10V, R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
20
4
A
A
A
Figure 4
312
125
0.83
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
1.2
100
52
o
C/W
o
C/W
o
C/W
TO-252
GATE
SOURCE
DRAIN (FLANGE)
D
G
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA75433S3S | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET MOSFETs 60V, 64A, 16mз |
| HUFA75433S3ST | 功能描述:MOSFET 55V 64a 0.016 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75531SK8 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75542P3 | 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75542S3S | 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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