參數(shù)資料
型號(hào): HUFA75433S3S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: N-Channel UltraFET MOSFETs 60V, 64A, 16mз
中文描述: 64 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 1/11頁
文件大小: 301K
代理商: HUFA75433S3S
2002 Fairchild Semiconductor Corporation
March 2002
Rev. A
H
HUFA75433S3S
N-Channel UltraFET
MOSFETs
60V, 64A, 16m
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET
process. This advanced pro-
cess technology achieves very low on-resistance per
silicon area, resulting in outstanding performance. This de-
vice is capable of withstanding high energy in the ava-
lanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power efficiency is important, such as
switching regulators, switching convertors, motor drivers,
relay drivers, low-voltage bus switches, and power man-
agement in portable and battery-operated products.
Applications
Motor and Load Control
Powertrain Management
Features
175°C Maximum Junction Temperature
UIS Capability (Single Pulse and Repetitive Pulse)
Ultra-Low On-Resistance r
DS(ON)
= 0.016
,
V
GS
=
10V
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 125
o
C, V
GS
= 10V, R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
64
5
A
A
A
Figure 4
250
150
1
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1
62
43
o
C/W
o
C/W
o
C/W
D
G
S
D
G
S
TO-263AB
FDB Series
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