參數(shù)資料
型號： HUFA75433S3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： N-Channel UltraFET MOSFETs 60V, 64A, 16mз
中文描述： 64 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 2/11頁
文件大?。?/td> 301K
代理商： HUFA75433S3S
2002 Fairchild Semiconductor Corporation
Rev. A
H
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 20V
Q
g(10)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 200
μ
H, I
AS
= 50A
Device Marking
75433S3
75433S3
Device
Package
TO-263
TO-263
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
HUFA75433S3ST
HUFA75433S3S
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V
V
DS
= 45V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
-
-
250
I
GSS
Gate to Source Leakage Current
-
-
±
100
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 64A, V
GS
= 10V
I
D
= 64A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.013
0.016
-
0.029
0.035
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
1550
540
150
90
50
3
6
20
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V
I
D
= 64A
I
g
= 1.0mA
117
65
3.9
-
-
-
-
-
-
V
DD
= 30V, I
D
= 64A
V
GS
= 10V, R
GS
= 6.2
-
-
-
-
-
-
-
155
-
-
-
-
98
ns
ns
ns
ns
ns
ns
11
92
39
26
-
V
SD
Source to Drain Diode Voltage
I
SD
= 64A
I
SD
= 32A
I
SD
= 64A, dI
SD
/dt = 100A/
μ
s
I
SD
= 64A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
37
42
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
相關(guān)PDF資料
PDF描述
HUFA75433S3ST N-Channel UltraFET MOSFETs 60V, 64A, 16mз
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUFA75433S3ST 功能描述:MOSFET 55V 64a 0.016 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75531SK8 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75542P3 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75542S3S 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75542S3ST 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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