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參數(shù)資料
| 型號(hào)： | HUF76629D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(20A, 100V, 0.054Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 20 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 334K |
| 代理商： | HUF76629D3 |
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
10
300
300
1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
C
= 25
C
T
J
= MAX RATED
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
10
100
0.001
0.01
0.1
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
50
0
10
20
30
40
1.5
2
2.5
3
3.5
4.5
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= -55
o
C
4
50
0
10
20
30
40
0
1
2
3
4
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
I
D
= 10A
30
40
50
60
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 20A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0.5
1.0
1.5
2.0
3.0
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 20A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
160
2.5
HUF76629D3, HUF76629D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76629D3S | 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(20A, 100V, 0.054Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76629D3 | Single Supply RS232C Line Driver/Receiver(?????μ?o?RS232C ?o?????????¨???2???2??????) |
| HUF76629D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA |
| HUF76629D3S | Single Supply RS232C Line Driver/Receiver(?????μ?o?RS232C ?o?????????¨???2???2??????) |
| HUF76639P3 | 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76629D3S | 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76629D3ST | 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76629D3ST_F085 | 功能描述:MOSFET N-Channel Logic Level UltraFET Power MOSFET 100V, 20A, 52m RoHS:否 制造商:Fairchild Semiconductor 晶體管極性: 汲極/源極擊穿電壓: 閘/源擊穿電壓: 漏極連續(xù)電流: 電阻汲極/源極 RDS（導(dǎo)通）: 配置: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| HUF76629D3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76629D3ST_SB82250 | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUF76629D3ST_SB82250 ULTRAFET POWER M |
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